SHOrt voltage elevation (SHOVE) test for weak CMOS ICs
نویسندگان
چکیده
A stress procedure for reliability screening, SHOrt Voltage Elevation (SHOVE) test, is analyzed here. During SHOVE, test vectors are run at higher-than-normal supply voltage for a short period. Functional tests and IDDQ tests are then performed at the normal voltage. This procedure is effective in screening oxide thinning, which occurs when the oxide thickness of a transistor is less than expected, as well as via defects. The stress voltage of SHOVE testing should be set such that the electric field across an oxide is approximately 6MV/cm. The stress time can be calculated by using the “effective oxide thinning” model. We will also discuss the requirements on input vectors for stressing complementary CMOS logic gates and CMOS domino logic gates efficiently.
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